摘要
As a novel substrate with a lattice-mismatch of only 0.8% along the a-axis to InN thin films, we propose LaBGeO5 (LBGO) with a trigonal symmetry for the first time. A single crystal growth of LBGO by Czochralski (Cz)-pulling was investigated, and c-axis-oriented LBGO single crystals with high crystallinity were successfully grown with a pulling rate of 0.5 mm/h in O-2-atomosphere. c-axis oriented InN film was subsequently grown on the obtained LBGO {001} substrate by metalorganic vapor epitaxy (MOVPE), and it was verified that InN film on LBGO was less-strained as compared with that on {001} sapphire substrate. It is stressed to say that LBGO can be expected as a lattice-matching substrate for the epitaxial growth of InN.
- 出版日期2011-5