AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with ZnO gate layer and (NH4)(2)S-x surface treatment

作者：Chiou Ya Lan^*; Lee Chi Sen; Lee Ching Ting

来源：Applied Physics Letters, 2010, 97(3): 032107.

DOI：10.1063/1.3467056

• aluminium compounds
• gallium compounds
• high electron mobility transistors
• III-V semiconductors
• II-VI semiconductors
• interface structure
• MIS devices
• semiconductor epitaxial layers
• surface treatment
• wide band gap semiconductors
• zinc compounds

The AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with ZnO gate insulator deposited using a vapor cooling condensation system were fabricated. The AlGaN surface treatment using (NH4)(2)S-x was performed to improve the quality of the interface between the ZnO layer and AlGaN layer. The (NH4)(2)S-x-treated MOS-HEMTs exhibited a higher saturation drain-source current of 0.74 A/mm, a maximum extrinsic transconductance of 200 mS/mm, an unit gain cutoff frequency of 9.1 GHz, a maximum frequency of oscillation of 17.1 GHz, and the Hooge's coefficient of 8.28x10(-6). The improved performances of the (NH4)(2)S-x-treated MOS-HEMTs were attributed to the reduction in surface states.

• 出版日期2010-7-19