摘要

We show that the shape of electroluminescence transients in organic semiconductors can be conveniently used to obtain the diffusion constant D of injected charge carriers, enabling the study of generalized Einstein relationship under nonequilibrium conditions as a function of the electric field. The appearance of peak at the onset of transient is shown to be the signature of diffusive regime of transport. We demonstrate it for two representative materials, Alq(3) and polymer poly [2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene], with the focus on the role of hot carriers in transport and their diffusivity.

  • 出版日期2011-7-1