Dynamic analysis of high-power and high-speed near-ballistic unitraveling carrier photodiodes at W-band

作者：Wu Y S^*; Shi J W

来源：IEEE Photonics Technology Letters, 2008, 20(13-16): 1160-1162.

DOI：10.1109/LPT.2008.925195

• high-power photodiode (PD)
• photodiodes (PDs)
• W-band

In this letter, we demonstrate and analyze the high-speed and high-power performance of a back-illuminated near-ballistic unitraveling-carrier photodiode (PD) at W-band. We utilize a three-port equivalent-circuit-modeling technique to show that the extracted average electron drift velocity in the whole epi-structure is around 5 x 10(7) cm/s, which corresponds to an ultrahigh transit time limited bandwidth (similar to 400 GHz). Such high internal bandwidth means that the demonstrated device can thus release the burden imposed on downscaling the device active area and epi-layer thickness for achieving ultrahigh-speed performance of PDs. With a collector thickness of 410 nm and an active area of 64 mu m(2), we can achieve a wide 3-dB bandwidth (120 GHz), and high saturation current bandwidth product performance (120 GHz, 24.6 mA, 2952 mA.GHz) under 25 Omega loading at W-band.

• 出版日期2008-8
• 单位中央民族大学