科研之友
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摘要
The memory operation of [6,6]-phenyl-C-61-butyric-acid-methyl-ester-containing polystyrene nanocomposites was investigated while varying the kind of gate metal used. Moderate magnitudes of flatband voltage shift were observed both after negative and positive programming voltages were applied to the Au gate. Excellent retention characteristics were obtained for electrons, whereas the retention time of holes was much shorter than that of electrons for the gate. An analysis of the band diagram indicated that carriers are injected and stored in the lowest unoccupied molecular orbital or highest occupied molecular orbital levels of fullerene. Au gates are promising from the practical viewpoint because they make the magnitudes of both the writing and erasing voltages small.
- 出版日期2015-10
