Modulation of nonlinear resistive switching behavior of a TaOx-based resistive device through interface engineering

作者：Wang, Zongwei; Kang, Jian; Yu, Zhizhen; Fang, Yichen; Ling, Yaotian; Cai, Yimao^*; Huang, Ru; Wang, Yangyuan

来源：Nanotechnology, 2017, 28(5): 055204.

DOI：10.1088/1361-6528/28/5/055204

• interface engineering
• nonvolatile memory
• resistive random access memory (RRAM)
• resistive switching
• nonlinearity
• tantalum oxide

A resistive switching device with inherent nonlinear characteristics through a delicately engineered interfacial layer is an ideal component to be integrated into passive crossbar arrays for the suppression of sneaking current, especially in ultra-dense 3D integration. In this paper, we demonstrated a TaOx-based bipolar resistive switching device with a nearly symmetrical bidirectional nonlinear feature through interface engineering. This was accomplished by introducing an ultra-thin interfacial layer (SiO2-x) with unique features, including a large band gap and a certain level of negative heat of oxide formation between the top electrode (TiN) and resistive layer (TaOx). The devices exhibit excellent nonlinear property under both positive and negative bias. Modulation of the inherent nonlinearity as well as the resistive switching mechanism are comprehensively studied by scrutinizing the results of the experimental control groups and the extensive characterizations including detailed compositional analysis, which suggests that the underlying mechanism of the nonlinear behavior is associatively governed by the serially connected metallic conductive filament and Flower-Nordheim tunneling barrier formed by the SiO2-x interface layer. The proposed device in this work has great potential to be implemented in future massive storage memory applications of high-density selector-free crossbar structure.

• 出版日期2017-2-3
• 单位北京大学