A Fault-Tolerant Ripple-Carry Adder with Controllable-Polarity Transistors

作者:Mohammadi Hassan Ghasemzadeh*; Gaillardon Pierre Emmanuel; Zhang Jian; De Micheli Giovanni; Sanchez Ernesto; Reorda Matteo Sonza
来源:ACM Journal on Emerging Technologies in Computing Systems, 2017, 13(2): 16.
DOI:10.1145/2988234

摘要

This article first explores the effects of faults on circuits implemented with controllable-polarity transistors. We propose a new fault model that suits the characteristics of these devices, and we report the results of a SPICE-based analysis of the effects of faults on the behavior of some basic gates implemented with them. Hence, we show that the considered devices are able to intrinsically tolerate a rather high number of faults. We finally exploit this property to build a robust and scalable adder whose area, performance, and leakage power characteristics are improved by 15%, 18%, and 12%, respectively, when compared to an equivalent FinFET solution at 22nm technology node.

  • 出版日期2017-3