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摘要
A Monte Carlo simulation model, i.e. sputtering etch model, was established with Monte Carlo method to simulate plasma etching induced surface morphology evolution. The surface morphology images and fractal exponents were obtained, with alpha = 0.5, beta = 0.27, z = 1.76. Germanium samples were etched in SF6 plasma and the post-etch surface was analyzed in order to compare with the model. The surface morphology images and fractal exponents by simulation describe the experimental results very well.
