科研之友
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摘要
We propose in this study an approach to highly reliable extraction scheme for the extrinsic resistances of the W-band metamorphic high electron mobility transistors. This method uses a directional search technique to determine the channel resistance of the device under zero-biased condition by minimizing the fitting errors between hot field effect transistor model S-parameters and measurements. From this, the extraction accuracies of the extrinsic resistances and all intrinsic parameters are greatly improved. Extractions for the parasitic elements are performed at four different gate widths (2 x 10 mu m, 2 x 20 mu m, 2 x 30 mu m, and 2 x 70 mu m), and we achieved the most accurate parameter prediction among the small-signal models reported to date with an effective fitting error of 10.69% in a frequency range of 0.5-110 GHz.
- 出版日期2014-11
