Dynamics of negative bias thermal stress-induced threshold voltage shifts in indium zinc oxide transistors: impact of the crystalline structure on the activation energy barrier

作者：Oh Seungha; Yang Bong Seob; Kim Yoon Jang; Choi Yu Jin; Kim Un Ki; Han Sang Jin; Lee Hong Woo; Kim Hyuk Jin; Kim Sungmin; Jeong Jae Kyeong^*; Kim Hyeong Joon

来源：Journal of Physics D: Applied Physics , 2014, 47(16): 165103.

DOI：10.1088/0022-3727/47/16/165103

• indium zinc oxide
• crystalline state
• gate bias instability
• thin film transistors

The kinetics of the negative bias thermal stress (NBTS)-induced Vth variations of indium zinc oxide (IZO) transistors with different crystallographic qualities were examined based on the stretched-exponential formalism. A poly-crystalline IZO device had a 0.64 eV lower activation barrier energy than an amorphous IZO device under NBTS conditions. This was attributed to the difference in the migration energy barrier between poly-crystalline and amorphous IZO films. For the recovery process, however, the activation energy barriers (similar to 0.75 eV) were independent of the crystal structure. A plausible microscopic mechanism to account for the experimental results is proposed.

• 出版日期2014-4-25