Magnetoresistance of Si/Nb/Si Trilayers

作者：Zaytseva I^*; Cieplak M Z; Abal'oshev A; Dluzewski P; Grabecki G; Plesiewicz W; Zhu L Y; Chien C L

来源：Acta Physica Polonica, A, 2010, 118(2): 406-408.

We study the superconductor-insulator transition in Si/Nb/Si trilayers, in which the thickness of Si is fixed at 10 nm, and the nominal thickness of Nb changes in the range between d = 20 nm down to d = 0.3 nm. The transmission electron microscopy indicates the formation of the mixed Nb-Si layer for small d. Both the thickness-induced, and the magnetic-field induced superconductor-insulator transition is observed. The crossing point of the i

• 出版日期2010-8