AlGaN HEMTs on patterned resistive/conductive SiC templates

作者：Prystawko Pawel^*; Sarzynski Marcin; Nowakowska Siwinska Anna; Crippa Danilo; Kruszewski Piotr; Wojtasiak Wojciech; Leszczynski Mike

来源：Journal of Crystal Growth, 2017, 464: 159-163.

DOI：10.1016/j.jcrysgro.2016.11.078

• Crystal morphology
• Metalorganic chemical vapor deposition
• Nitrides
• Semiconducting III-V materials
• High electron mobility transistors

High performance GaN-based high electron mobility transistors (HEMTs) on SiC require low-miscut (similar to 0.45 degrees), resistive substrates, which are very expensive. A cost-effective solution is to use resistive SiC template i.e., grow a thick resistive SiC epitaxial layer on cheap, conductive SiC substrate. However, this approach requires much higher miscut (2-8 degrees). In the present work we show a lateral patterning technology capable to locally decrease the high miscut of the resistive SiC template, down to a level acceptable for GaN epitaxy. On such patterned SiC templates we grew smooth AlGaN/GaN structures. The maximum width of flat regions available for device fabrication was nearly 100 gm. In these flat regions AlGaN-based HEMTs were fabricated and characterized.

• 出版日期2017-4-15