Massive manufacture and characterization of single-walled carbon nanotube field effect transistors

作者：Martin Fernandez I^*; Sansa M; Esplandiu M J; Lora Tamayo E; Perez Murano F; Godignon P

来源：Microelectronic Engineering, 2010, 87(5-8): 1554-1556.

DOI：10.1016/j.mee.2009.11.026

• Nanomanufacturing
• Carbon nanotubes
• Single-walled
• Transistor
• CNT-FET

A technology to address massive and batch fabrication of carbon nanotube field effect transistors (CNT-FET) based systems at wafer level is presented. In order to demonstrate the feasibility of the technology, we have designed, fabricated, tested and evaluated a CNT-FET based monitor chip. The monitor chip is composed of 16 different in design CNT-FET structures. In total, each monitor chip contains 5760 devices. Each wafer is composed of 24 monitor chips. Evaluation of the data obtained through automatic test procedures gives evidence of the fabrication of more than 10,000 functional CNT-FET on a 4 inch wafer. A yield of functional CNT-FET of 27% has been achieved for optimal designs.

• 出版日期2010-8