Advanced high-k/metal gate stack progress and challenges - a materials and process integration perspective

作者：Park C S^*; Lysaght P; Hussain M M; Huang J; Bersuker G; Majhi P; Kirsch P D; Jammy R; Tseng H H

来源：International Journal of Materials Research, 2010, 101(2): 155-163.

DOI：10.3139/146.110262

• High-k
• Metal gate
• Scaling
• Equivalent oxide thickness
• Threshold voltage

Scaling of complementary metal oxide semiconductor devices is critical to enhancing performance and reducing:; the production cost of transistors. Conventional gate stack film systems consisting of a SiO(2) dielectric layer between the Si substrate channel and a doped polycrystalline silicon (poly-Si) gate electrode exhibited excessively high gate current leakage when the physical thickness of this traditional dielectric was scaled to T(phys) = similar to 2 nm. The rate of scaling was initially preserved by incorporating nitrogen to form an SiO(x)N(y) insulator layer; however, this material soon experienced unacceptable levels of direct tunneling leakage current, which launched an industry-wide investigation of potential high dielectric constant (high-k) metal oxides Lis replacement materials for the SiO(2) based gate dielectric layer. Thermal stability requirements for the introduction of high-k dielectric materials necessitated the simultaneous replacement of poly-SI with a metal gate electrode due to several performance factors including C unscalable threshold voltage. Although high-k/metal gate thermal stability has been demonstrated, significant challenges remain to be resolved for future technology nodes. This paper reviews the progress and challenges associated with the introduction of high-k/metal (gate transistors, including threshold old voltage tuning and gate dielectric thickness scaling, from a materials and process integration perspective.

• 出版日期2010-2