Fabrication of hybrid metal island/silicon single electron transistor

作者：Lee Yen Chun^*; Orlov Alexei O; Snider Gregory L

来源：JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29(6): 06FB02.

DOI：10.1116/1.3644340

• aluminium
• chemical mechanical polishing
• Coulomb blockade
• elemental semiconductors
• encapsulation
• island structure
• nanofabrication
• semiconductor growth
• silicon
• silicon-on-insulator
• single electron transistors
• tantalum
• tunnelling

A novel process for silicon single electron transistors (Si-SET) is presented, combining chemical mechanical polishing (CMP) with the advantages of silicon processing. To eliminate effects caused by random distribution of dopants in the island, The Si-SET's doped-Si island is replaced with an aluminum or tantalum island by integrating a metal CMP technique with our nano-encapsulation process. The fabricated hybrid Al-island Si-SET has similar to 10 nm silicon on insulator lines as the source and drain leads. It shows characteristic Coulomb blockade oscillations with a charging energy of similar to 4 meV. The fabrication results demonstrate the scalability of the SET island and the tunnel junction size in a manufacturable top-down approach.

• 出版日期2011-11