A U-Shaped Channel SOI-LIGBT With Dual Trenches

作者：Zhang, Long; Zhu, Jing; Sun, Weifeng^*; Zhao, Minna; Chen, Jiajun; Huang, Xuequan; Ding, Desheng; Chen, Jian; Shi, Longxing

来源：IEEE Transactions on Electron Devices, 2017, 64(6): 2587-2591.

DOI：10.1109/TED.2017.2696258

• Deep-oxide trench
• ON-state voltage drop
• silicon-on-insulator lateral insulated gate bipolar transistor (SOI-LIGBT)
• turn-off loss
• U-shaped channel

This paper proposes a U-shaped channel silicon-on-insulator lateral insulated gate bipolar transistor (SOI-LIGBT) with dual trenches to reduce the turn-off loss while keep the low ON-state voltage drop. The device features a U-shaped gate trench (G1) and a U-shaped hole-barrier trench (G2). By introducing the dual trenches, enhanced carrier stored effect at the emitter side, more uniformcarrier distribution in the drift region, and low carrier density at the collector are realized, resulting in decreases of ON-state voltage drop (V-ON) and turn-OFF loss (E-OFF). The proposed SOI-LIGBT offers an E-OFF 52.3% lower than the conventional planar-gateU-shaped channel SOI-LIGBT at the same V-ON of 1.22 V. Moreover, the proposed SOI-LIGBT exhibits a latch-up free characteristic at the current density larger than 1200 A/cm(2).

• 出版日期2017-6
• 单位东南大学