Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

作者：Jeon Dae Young; Park So Jeong; Mouis Mireille; Barraud Sylvain; Kim Gyu Tae^*; Ghibaudo Gerard

来源：Applied Physics Letters, 2014, 105(26): 263505.

DOI：10.1063/1.4905366

The less surface roughness scattering effects, owing to the unique operation principle, in junctionless nanowire transistors (JLT-NW) were shown by low-temperature characterization and 2D numerical simulation results. This feature could allow a better current drive under a high gate bias. In addition, the dominant scattering mechanisms in JLT-NW, with both a short (L-M = 30 nm) and a long channel (L-M = 10 mu m), were investigated through an in-depth study of the temperature dependence of transconductance (g(m)) behavior and compared to conventional inversion-mode nanowire transistors.

• 出版日期2014-12-29
• 单位中国地震局