Mechanical masking of films deposited by atomic layer deposition

作者：Langston Michael C^*; Usui Takane; Prinz Fritz B

来源：Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , 2012, 30(1): 01A153.

DOI：10.1116/1.3669520

In this work a new method to selectively deposit films by atomic layer deposition (ALD) is presented. It was found that polished silicon masks pressed against silicon substrates were able to mask ALD deposition with submicron diffusion under the mask. Static and dynamic assemblies were fabricated to realize the benefits of mechanical masking. The static assemblies demonstrated the ability to block deposition on the back sides of transmission electron microscopy grids, as well as the back sides of 100 mm silicon wafers. The dynamic masking assembly was able to selectively deposit platinum, and then passivate the metal region with zirconium oxide in situ, resulting in a fully embedded metal in dielectric structure.

• 出版日期2012-1