A model for the bandgap energy of the dilute nitride InGaNAs alloys by modifying simplified coherent potential approximation

作者:Zhao, Chuan-Zhen*; Qu, You-Yang; Wei, Tong; Sun, Xiao-Dong; Wang, Sha-Sha; Lu, Ke-Qing
来源:Modern Physics Letters B, 2014, 28(8): 1450066.
DOI:10.1142/S0217984914500663

摘要

In this paper, a model describing the bandgap energy of the dilute nitride alloy InxGa1-xNyAs1-y is developed based on the modification of simplified coherent potential approximation (MSCPA) and the band anti-crossing model (BAC). The parameters in the model are obtained by fitting the experimental bandgap energies of the ternary alloys InGaAs, InGaN, GaNAs and InNAs. It is found that the results agree well with the experimental data. We also find that although the bandgap energies of InxGa1-xNyAs1-y and InxGa1-xAs can be calculated by using MSCPA, the physical mechanisms for the bandgap evolution of InxGa1-xNyAs1-y and InxGa1-xAs are very different. In addition, it is found that the model in this work may be used in a larger composition range than the BAC model.