Distribution of residual strain around nanoindentations in silicon

作者：Li, X.; Li, Z.; Tao, X. F.^*; Ren, L. L.; Gao, S. T.; Xu, G. F.

来源：Materials Letters, 2014, 132: 285-289.

DOI：10.1016/j.matlet.2014.06.004

• Residual strain
• Nanoindentation
• Silicon
• Surfaces
• Microstructure

Residual strain around pyramidal nanoindentations on single-crystal silicon is mapped by electronic backscatter diffraction system and CrossCourt software. Both of the (001) and (111) planes present anisotropic strain features adjacent to indentations in specific crystallographic orientations with strain resolutions of 2.2 x 10(-4) and 2.5 x 10(-4) for Si (001) and (111) surfaces, respectively. The anisotropic distribution of strain is due to the occurrence of dislocation slip in the silicon microstructure, which is determined by the number and type of slip systems and corresponding Schmid factor. The nanoindentation plastic deformation of single-crystal silicon is a process accompanied by dislocation slip on specific planes in specific directions.

• 出版日期2014-10-1
• 单位中国计量科学研究院; 中南大学