科研之友
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摘要
Methods based on the selective excitation of low-temperature photoluminescence (LTPL) are applied to the analysis of the electron spectrum of defects created in strongly compensated cadmium telluride (CdTe). It is shown that dominant (with the highest concentration) acceptors have activation energies of 48.2 +/- 0.4 meV, 97.9 +/- 0.6 meV, and 119.7 +/- 1.0 meV, which is not characteristic of known substitutional impurities in CdTe. For each of the acceptors listed above, the excitation energies of states are determined and preliminary conclusions are made about the symmetry of the centers. The observed structure of the excited states differs from the spectrum of standard substitutional acceptors and allows one to simulate the electron configuration of defects.
