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摘要
A model for n-GaAs based on nonlinear carrier transport theory has been proposed. Complex bifurcations are studied as the excited field varies. Numerical simulation shows that the system exhibits periodicity, quasi-periodicity, and chaos, depending on the frequency and amplitude of the externally applied field, as expected. We also compute the quantities characterizing chaotic behaviours. An occasional pulse driving technique to control chaotic attactor to the desired periodic trajectory is illustrated.
- 出版日期2002-4
- 单位上海大学
