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摘要
The ambipolar behavior of tunneling fieldeffect transistors (TFETs) has been investigated quantitatively by introducing a novel parameter: ambipolarity factor (nu). It has been found that the malfunction of TFET can result from the ambipolar state which is not on- or off-state. Therefore, the effect of ambipolar behavior on the device performance should be parameterized quantitatively, and this has been successfully evaluated as a function of device structure, gate oxide thickness, supply voltage, drain doping concentration and body doping concentration by using nu.
- 出版日期2011-12
