Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

作者：Leonard J T^*; Cohen D A; Yonkee B P; Farrell R M; Margalith T; Lee S; DenBaars S P; Speck J S; Nakamura S

来源：Applied Physics Letters, 2015, 107(1): 011102.

DOI：10.1063/1.4926365

We report on our recent progress in improving the performance of nonpolar III-nitride verticalcavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and employing a multi-layer electron-beam evaporated ITO intracavity contact. The use of an ion implanted aperture improves the lateral confinement over SiNx apertures by enabling a planar ITO design, while the multi-layer ITO contact minimizes scattering losses due to its epitaxially smooth morphology. The reported VCSEL has 10 QWs, with a 3 nm quantum well width, 1 nm barriers, a 5 nm electronblocking layer, and a 6.95-lambda total cavity thickness. These advances yield a single longitudinal mode 406 nm nonpolar VCSEL with a low threshold current density (similar to 16 kA/cm(2)), a peak output power of similar to 12 mu W, and a 100% polarization ratio. The lasing in the current aperture is observed to be spatially non-uniform, which is likely a result of filamentation caused by non-uniform current spreading, lateral optical confinement, contact resistance, and absorption loss.

• 出版日期2015-7-6