摘要
Semiconductive dielectric SrTiO3-based thin films are promising candidates for in situ monitoring of trace levels of oxygen in semiconductor or organic light-emitting diode (LED) display manufacturing processes. SrTiO3-based thin films, which are deposited by atomic-layer deposition (ALD), exhibit high sensitivity to oxygen at room temperature; however, the sensitivity can be affected by SrO-based surface segregation. In this study, we will show that annealing temperature and time are the key parameters for decreasing the coverage of oxygen-insensitive SrO-based surface segregation.
- 出版日期2010