Stable p-ZnO thin films by oxygen control using reverse spray dynamics

作者：Hazra SK; Basu S^*

来源：Solid State Communications, 2005, 133(4): 245-248.

DOI：10.1016/j.ssc.2004.11.002

• p-ZnO
• annealing
• oxygen control
• stoichiometry

Semiconducting ZnO thin films were deposited on glass substrates by a modified CVD method using reverse spray of the precursor solutions. The films were characterized by X-ray diffraction (XRD) and Hall effect measurements at room temperature. The results of XRD analysis revealed polycrystalline nature of the grown films with different crystallographic orientations. The type of conductivity and the carrier concentration as determined from Hall effect measurements were dependent on the deposition temperature and annealing conditions. Oxygen control at 220degreesC produced p-ZnO film with high hole mobility (193 cm(2)/V s). The electrical conductivity was correlated to the stoichiometry of the grown films.

• 出版日期2005-1