摘要
Ge-Ga-Ag-S chalcogenide glasses with the composition Ge30Ga3Ag4S63 Were obtained by the conventional melt-quenching method. According to the visible-infrared and infrared spectra, Ge30Ga3Ag4S63 chalcogenide glass possesses wide transmittance window from 510 nm in the visible region up to 11.5 mu m in the infrared region. And the present glass has better glass-forming ability (the difference between glass transition temperature and the peak temperature of crystallization is larger than 100 degrees C). Utilizing maker-fringe technique, a prominent second-harmonic generation was observed in Ge30Ga3Ag4S63 chalcogenide glass after irradiated by an electron beam (Accelerating voltage: 25 kV; Irradiating current: 15 nA; Irradiating time: 10 min). And the mechanism of second-harmonic generation in the Ge-Ga-Ag-S system glasses was discussed.
- 出版日期2006-6
- 单位武汉理工大学