Understanding of the excess channel noise in InAlAs/InGaAs/InP high electron mobility transistors in impact ionization regime

作者：Wang Hong^*; Liu Yuwei; Zeng Rong; Tan Chee Leong

来源：Applied Physics Letters, 2007, 90(10): 103503.

DOI：10.1063/1.2711376

The characterization and analysis of high frequency noise of InP-based high electron mobility transistors in the impact ionization regime reveal that different physical mechanisms are responsible for the excess channel noise at different frequency ranges. The excess noise at frequencies below 10 GHz is mainly due to the hole recombination in the channel. However, excess channel noise at higher frequencies could be dominated by the fluctuation of impact ionization which has a much smaller time constant and therefore a much higher cutoff frequency.

• 出版日期2007-3-5
• 单位南阳理工学院