Highly doped silicon nanowires based electrodes for micro-electrochemical capacitor applications

作者：Thissandier Fleur; Le Comte Annaig; Crosnier Olivier; Gentile Pascal^*; Bidan Gerard; Hadji Emmanuel; Brousse Thierry; Sadki Said

来源：Electrochemistry Communications, 2012, 25: 109-111.

DOI：10.1016/j.elecom.2012.09.019

• Electrochemical capacitor
• Silicon nanowires
• Chemical Vapor Deposition
• Micro-device

Highly doped (both n and p-type dopings) silicon nanowires (SiNWs) have been deposited via Chemical Vapor Deposition and investigated as electrode materials for micro-capacitor in a standard organic based electrolyte. Silicon nanostructuration enables to increase areal capacitance. Double layer capacitance values up to 46 mu F.cm(-2) have been measured. Micro capacitors based on two SiNWs electrodes exhibit an excellent cycling ability and power density as high as 1.6 mW.cm(-2).

• 出版日期2012-11
• 单位中国地震局