Double-Gate Modulated Corbino TFTs

作者：Choe Younwoo; Lee Suhui; Billah Mohammad Masum; Mativenga Mallory^*; Jang Jin^*

来源：IEEE Electron Device Letters, 2016, 37(9): 1143-1146.

DOI：10.1109/LED.2016.2589967

• Bulk-accumulation
• Corbino
• circular
• thin-film transistor
• oxide amorphous semiconductor

Short-channel Corbino thin-film transistors (TFTs) exhibit infinite output resistance beyond pinchoff when the outerring electrode is biased as the drain but suffer from low drain currents. It is shown here that the employment of a thin (<25 nm) amorphous oxide semiconductor and a double-gate (DG) structure (with a top-gate electrically tied to a bottom-gate) increases the drain currents of the Corbino TFTs biased in the outer-drain condition by over two times through bulk-accumulation (BA), without compromising their infinite output resistance beyond pinchoff or bias, temperate, and light stability. By experiment and through 3-D TCAD simulations, evidence of BA under DG modulation and the origin of the infinite output resistance beyond pinchoff in Corbino TFTs are also revealed in this letter.

• 出版日期2016-9