Deep levels in iron doped n- and p-type 4H-SiC

作者：Beyer F C^*; Hemmingsson C G; Leone S; Lin Y C; Gallstrom A; Henry A; Janzen E

来源：Journal of Applied Physics, 2011, 110(12): 123701.

DOI：10.1063/1.3669401

Deep levels were detected in Fe-doped n- and p-type 4H-SiC using deep level transient spectroscopy (DLTS). One defect level (E(C)-0.39 eV) was detected in n-type material. DLTS spectra of p-type 4H-SiC show two dominant peaks (E(V) + 0.97 eV and E(V) + 1.46 eV). Secondary ion mass spectrometry measurements confirm the presence of Fe in both n-and p-type 4H-SiC epitaxial layers. The majority of the capture process for Fe1, Fe2, and Fe3 is multi-phonon emission assisted. These three detected peaks are suggested to be related to Fe.

• 出版日期2011-12-15