a-IGZO TFTs With Inductively Coupled Plasma Chemical Vapor Deposited SiOx Gate Dielectric

作者：Xiao, Xiang^*; Deng, Wei; He, Xin; Zhang, Shengdong

来源：IEEE Transactions on Electron Devices, 2013, 60(8): 2687-2690.

DOI：10.1109/TED.2013.2266414

• Amorphous indium-gallium-zinc oxide (a-IGZO)
• gate dielectric
• inductively coupled plasma chemical vapor deposition (ICP-CVD)
• low temperature
• thin-film transistors (TFTs)

In this brief, amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) are fabricated at < 150 degrees C. Inductively coupled plasma chemical vapor deposition (ICP-CVD) is used to grow SiOx gate dielectric of the a-IGZO TFTs. The fabricated devices exhibit a high saturation mobility of 26.85 cm(2)/V.s, a steep subthreshold swing of 0.145 V/decade, and an ON/OFF current ratio of 2.3 x 10(7). Atomic force microscope and scanning electron microscope images show that the surface characteristics of the ICP-CVD SiOx gate dielectric are much superior to those of the conventional plasma-enhanced CVD SiOx. It is suggested that the superior surface characteristics of the ICP-CVD SiOx are the main origin of the high performance of the a-IGZO TFTs with the ICP-CVD SiOx gate dielectric.

• 出版日期2013-8
• 单位北京大学