Annealing temperature effects on structural and magnetic properties of Ga1-xMnxN films

作者：Hu, B.; Man, B. Y.^*; Liu, M.; Chen, C. S.; Gao, X. G.; Xu, S. C.; Wang, C. C.

来源：Surface Engineering, 2012, 28(7): 540-543.

DOI：10.1179/1743294412Y.0000000014

• LMBE
• Room temperature FM
• Annealing temperature
• GaMnN

Amorphous gallium nitride doped with Mn thin films was deposited on sapphire (0001) substrates by laser molecular beam epitaxy. After simple processing of annealing at different temperatures for 30 min in ammonia atmosphere, good quality Ga1-xMnxN films were obtained. In order to investigate the influence of annealing temperature on the crystalline quality and structural and magnetic properties, the films are analysed by X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy and alternating gradient magnetic field meter. The results show that the annealing can improve the quality of Ga1-xMnxN films, and the optimum annealing temperature is 1050 degrees C; moreover, there is no second phase forming. Through magnetic analysis, we obtained the annealed samples of room temperature ferromagnetic property and paramagnetism of the as grown film and obtained the way of changing the paramagnetism into ferromagnetism using the simple method.

• 出版日期2012-8
• 单位山东师范大学