科研之友
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摘要
This paper presents a new way to improve the speed of the separated absorption grading charge multiplication avalanche photodiode by adding a new thin charge layer between absorption and grading layers. In this method, we assume a nonuniform electric field in different regions of the structure. In addition, based on carrier rate equations, a circuit model of the proposed structure is extracted. Considering the trade-offs between thicknesses of layers, we try to acquire the optimum structure by setting the physical parameters. Finally, it is shown that, in comparison with the conventional structure, considerable improvements in the gain-bandwidth product and also breakdown voltage are achieved.
- 出版日期2014-5-21
