Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN/GaN heterostructure transistors

作者：Polyakov A Y; Smirnov N B; Govorkov A V; Markov A V; Dabiran A M; Wowchak A M; Osinsky A V; Cui B; Chow P P; Pearton S J^*

来源：Applied Physics Letters, 2007, 91(23): 232116.

DOI：10.1063/1.2823607

The origin of hysteresis in capacitance-voltage (C-V) characteristics was studied for Schottky diodes prepared on AlGaN/GaN transistor structures with GaN (Fe) buffers. The application of reverse bias leads to a shift of C-V curves toward higher positive voltages. The magnitude of the effect is shown to increase for lower temperatures. The phenomenon is attributed to tunneling of electrons from the Schottky gate to localized states in the structure. A technique labeled "reverse" deep level transient spectroscopy was used to show that the deep traps responsible for the hysteresis have activation energies of 0.25, 0.6, and 0.9 eV. Comparison with deep trap spectra of GaN buffers and Si doped n-GaN films prepared on GaN buffers suggests that the traps in question are located in the buffer layer.

• 出版日期2007-12-3