Donor binding energy and radiative life time of exciton in a strained InGaN/GaN quantum wire

作者：Pattammal M; Peter A John^*; Yoo ChangKyoo

来源：Superlattices and Microstructures, 2011, 50(2): 181-190.

DOI：10.1016/j.spmi.2011.05.015

• Semiconductors
• Confined systems

Donor binding energies of positively and negatively charged impurities in a strained InGaN/CaN cylindrical quantum wire are investigated. The interband optical transition with and without the exciton is computed as a function of wire radius. The exciton oscillator strength and the exciton lifetime for radiative recombination as a function of wire radius have been computed.

• 出版日期2011-8