Development of gettering processes for the preparation of the solar silicon material

作者：Efremov AA^*; Klyui NI; Litovchenko VG; Popov VG; Romanyuk AB; Romanyuk BN

来源：Opto-Electronics Review, 2000, 8(4): 410-413.

• gettering
• solar cell
• ion implantation
• silicon
• diamond-like film

A number of gettering treatments of Cz-Si wafers have been investigated. The characteristic parameters of the wafers have been measured. Among the procedures used, the gettering treatment, which included deposition of Ge film, followed by ion beam mixing and thermal annealing was preferred This treatment allows to increase the diffusion length (L-d) Of non-equilibrium carriers from 25-30 mum to 100-300 mum. The subsequent thermal treatments did not lead to deterioration of Ld as if teak place far the wafers without gettering treatments.

• 出版日期2000-12