An organic charge trapping memory transistor with bottom source and drain contacts

作者：Debucquoy Maarten^*; Bode Dieter; Genoe Jan; Gelinck Gerwin H; Heremans Paul

来源：Applied Physics Letters, 2009, 95(10): 103311.

DOI：10.1063/1.3223588

• lithography
• organic compounds
• random-access storage

We present an organic charge trapping memory transistor with lithographically defined bottom source and drain contacts. This device can be written and erased at voltages as low as 15 V. More than 500 write and erase cycles and the retention of the trapped charge over more than three months are shown, demonstrating the possibilities of this device as a reprogramable nonvolatile organic memory element.

• 出版日期2009-9-7