A maskless laser-write lithography processing of thin-film transistors on a hemispherical surface

作者：Yoo Geonwook; Lee Hojin; Radtke Daniela; Stumpf Marko; Zeitner Uwe; Kanicki Jerzy^*

来源：Microelectronic Engineering, 2010, 87(1): 83-87.

DOI：10.1016/j.mee.2009.05.032

• Maskless lithography
• Thin-film transistor
• Non-planar surface

We report on the design and fabrication methods for a hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) on a non-planar substrate using laser-write lithography (LWL). Level-to-level alignment with a high accuracy is demonstrated using LWL method. The fabricated a-Si:H TFT exhibits a field-effect mobility of 0.27 cm(2)/V S. threshold voltage of 4.9 V and on/off current ratio of similar to 6 x 10(6) in a saturation regime. The obtained results demonstrate that it is possible to fabricate the a-Si:H TFTs and complex circuitry on a curved surface, using a well-established a-Si:H TFT technology in combination with the maskless lithography, for hemispherical or non-planar sensor arrays.

• 出版日期2010-1