科研之友
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摘要
An acceleration mechanism of silane plasma chemical vapor deposition by diborane is proposed on the basis of an ab initio molecular orbital calculation. Hydrogen abstraction from the growing surface by BH(2) is calculated to be much more favorable than that by SiH(3) from both the kinetic and thermodynamic viewpoint. Thus, the abstraction by BH(2) is predicted to occur frequently, although the concentration of BH(2) is considerably lower than that of SiH(3). This process creates a dangling bond on the growing surface and then the deposition rate is increased.
- 出版日期2011-5
