An O-2(+) probe energy study for boron quantification in Si1-xGex (0 <= x <= 1) using secondary ion mass spectrometry

作者：Morris Richard J H^*

来源：Applied Surface Science, 2016, 390: 778-783.

DOI：10.1016/j.apsusc.2016.08.099

• SIMS depth profiling
• B-11 implantation
• Si1-xGex
• SIMS quantification

With SiGe device technology still developing, a concomitant effort to develop accurate dopant quantification over the entire Si1-xGex (0 <= x <= 1) range using ultra low energy secondary ion mass spectrometry is required. Here we present a comprehensive secondary ion mass spectrometry study of the B-11(+) yield behaviour from a range of Si1-xGex (0 <= x <= 1) reference samples implanted with the same B dose. Depth profiling conditions include near normal incidence O-2(+) over an energy range of 0.2 - 1.0 key. Quantification of the B concentration for each profile was achieved by determining the individual profile sensitivity factor. Only for E-p <= 300 eV was the variation in sensitivity factor with Ge well described by a linear dependence over the whole Si1-xGex (0 <= x <= 1) matrix.

• 出版日期2016-12-30