Ultra-thin body and thin-BOX SOI CMOS technology analog figures of merit

作者：Kilchytska V^*; Arshad M K Md; Makovejev S; Olsen S; Andrieu F; Poiroux T; Faynot O; Raskin J P; Flandre D

来源：Solid-State Electronics, 2012, 70: 50-58.

DOI：10.1016/j.sse.2011.11.020

• Ultra-thin body FD SOI MOSFETs
• Ultra-thin BOX
• Analog figures of merit
• Cut-off frequency
• High-temperature
• Output conductance

In this paper, we analyze, for the first time to our best knowledge, the perspectives of ultra-thin body and ultra-thin BOX (UTBB) SOI CMOS technology for analog applications. We show that UTBB is a promising contender for analog applications, exhibiting high maximum transconductance, drive current, intrinsic gain and achievable cut-off frequencies in the range of 150-220 GHz. Effect of operation regime, substrate bias, channel width and high temperature (up to 250 degrees C) on analog figures-of-merit (FoM) are analyzed. Benchmarking of UTBB with other technologies (as planar FD SOI, different FinFETs, UTB with thick BOX) is presented.

• 出版日期2012-4
• 单位中国地震局