Low-temnerature-processed inorganic gate dielectrics for plastic-substrate-based organic field-effect transistors

作者：Tan H S^*; Cahyadi T; Wang Z B; Lohani A; Tsakadze Z; Zhang S; Zhu F R; Mhaisalkar S G

来源：IEEE Electron Device Letters, 2008, 29(7): 698-700.

DOI：10.1109/LED.2008.922315

• flexibility
• organic field-effect transistors (OFETs)
• SiN(x) dielectric
• sol-gel (SG) dielectric

Low-temperature-processed inorganic gate dielectrics were employed here to yield high-performance organic field-effect transistors (FETs) on flexible plastic substrates. SiN(x) dielectrics deposited at room temperature and SiN(x)/sol-gel silica dielectric bilayer processed below 100 degrees C were demonstrated to be viable gate dielectric materials, with the latter yielding effective field-effect mobilities of similar to 1 cm(2)/V . s at operating voltages of under -5 V with an on-off current ratio in the range of 10(5). The enhancement in device performance was attributed to an improved semiconductor-dielectric interface and a larger grain size of the pentacene deposited on the bilayer dielectrics. The flexibility of FETs fabricated on polyester substrates was also demonstrated with insignificant changes in device performance upon subjecting the devices to strains of 2.27%.

• 出版日期2008-7
• 单位南阳理工学院