科研之友
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摘要
An ultrafast low energy loss lateral insulated gate bipolar transistor (LIGBT) with a novel segmented anode structure is demonstrated. The anode comprises of segments of p(+) and n(+) /p (n(+) region formed within a p-type region) along the width of the device. By simply varying the ratio of these segments the tradeoff between conduction and switching losses can be varied. Unlike an anode shorted structure this does not exhibit an undesirable snapback in its on-state characteristics. This structure is simple to realize in a CDMOS process without the need for any additional process steps.
- 出版日期2003-11
