Measurement of the effect of plasmon gas oscillation on the dielectric properties of p- and n-doped AlxGa1-xN films using infrared spectroscopy

作者：Rahbany N; Kazan M^*; Tabbal M; Tauk R; Jabbour J; Brault J; Damilano B; Massies J

来源：Journal of Applied Physics, 2013, 114(5): 053505.

DOI：10.1063/1.4817172

We report on the application of infrared (IR) spectroscopy as an approach to nondestructive optical method for quantitative measurement of relevant optoelectronic properties in complex multilayer systems. We developed a numerical technique to analyze quantitatively the dielectric properties and plasmon gas characteristics from infrared reflectivity measurements. The developed technique is based on the combination of Kramers-Kronig theorem with the classical theory of electromagnetic wave propagation in a system of thin films. We applied the approach to deduce the dielectric properties and plasmon gas characteristics in p- and n-doped AlGaN alloys of various compositions, deposited on AlN(100nm)/GaN(30 nm)/Al2O3. The results agreed with the electrical measurements, and the back calculation reproduced satisfactory the reflectivity measurements, demonstrating the accuracy of the developed technique.

• 出版日期2013-8-7