Micro-raman scattering study of hexagonal InGaN epitaxial layer

作者：Wang RM^*; Chen GD; Zhu YZ

来源：Acta Physica Sinica, 2006, 55(2): 914-919.

• Raman scattering
• X-ray diffraction
• phase separation
• stress
• L.O phonon-plasmon coupled mode

Hexagonal InxGa1-xN film grown by metalorganic chemical vapor deposition (MOCVD) was studied by Micro-Raman scattering and X-ray diffraction. The phase separation was observed in InxGa1-xN, the biaxial stress was measured by both Raman and X-ray diffraction. In Raman spectroscopy, the A(1) (LO) mode of InxGa1-x N is absent. Instead the LO phonon-plasmon coupled mode (LPP+) was observed at about 778 cm(-1). The carrier concentration was determined by the frequency of the coupled mode. The E-2 and A(1) (TO) modes of InxGa1-xN layer exhibit. a down-shift compare to those of GaN layer. At low temperature, the peak induced by electronic transition was observed in Raman spectra of InxGa1-xN.

• 出版日期2006-2
• 单位西安交通大学