Micro-distribution of carbon in semi-insulating gallium arsenide

作者：Xu YS^*; Yang XR; Wang HY; Lei T; Liu CC; Xin W; Qin DZ

来源：Acta Physica Sinica, 2005, 54(4): 1904-1908.

• semi-insulating gallium arsenide
• cellular dislocation
• carbon acceptor

Micro-distribution of C acceptor defect in semi-insulating gallium arsenide (SI-GaAs) wafer has been investigated by means of chemical etching, microscopic observation, transmission electron microscope, eelectron probe x-ray microanalyzer. Experimental results show that there is a corresponding relationship between the distribution of C impurity and dislocation density in a wafer. In relatively high dislocation density areas, dislocations form relatively small cells with few isolated dislocation within each cell. Here the profile of C distribution in the area of a cell is "U"-shaped. The cell diameter increases as the dislocation density decreases, and the dislocations form relatively large cells with a few isolated dislocations within each cell. The profiles of C distribution in the area of a cell is "W"-shaped.

• 出版日期2005-4
• 单位河北工业大学