Multi-finger flexible graphene field effect transistors with high bendability

作者：Lee Jongho^*; Tao Li; Parrish Kristen N; Hao Yufeng; Ruoff Rodney S; Akinwande Deji

来源：Applied Physics Letters, 2012, 101(25): 252109.

DOI：10.1063/1.4772541

Highly bendable graphene field-effect transistors are fabricated on polyimide films. The device offers robust performance against various conditions including immersion in liquids, and dynamic loading tests, which are hazardous to conventional electronics. Bendability of the sample is tested with the bending radius of down to 1.3 mm; the devices remain fully functional with less than 8.7% reduction and no reduction in the electron and hole mobility after repeated bending tests, respectively. Multi-finger electrodes are implemented on flexible substrates to enhance its current drive. Silicon-nitride passivation offers efficient chemical protection over diverse liquids and robust mechanical protection against impacts.

• 出版日期2012-12-17