Atomic arrangement at ZnTe/CdSe interfaces determined by high resolution scanning transmission electron microscopy and atom probe tomography

作者：Bonef Bastien^*; Gerard Lionel; Rouviere Jean Luc; Grenier Adeline; Jouneau Pierre Henri; Bellet Amalric Edith; Mariette Henri; Andre Regis; Bougerol Catherine

来源：Applied Physics Letters, 2015, 106(5): 051904.

DOI：10.1063/1.4907648

High resolution scanning transmission electron microscopy and atom probe tomography experiments reveal the presence of an intermediate layer at the interface between two binary compounds with no common atom, namely, ZnTe and CdSe for samples grown by Molecular Beam Epitaxy under standard conditions. This thin transition layer, of the order of 1 to 3 atomic planes, contains typically one monolayer of ZnSe. Even if it occurs at each interface, the direct interface, i.e., ZnTe on CdSe, is sharper than the reverse one, where the ZnSe layer is likely surrounded by alloyed layers. On the other hand, a CdTe-like interface was never observed. This interface knowledge is crucial to properly design superlattices for optoelectronic applications and to master bandgap engineering.

• 出版日期2015-2-2
• 单位中国地震局