An Integrated LVDS Transmitter in 0.18-mu m CMOS Technology With High Immunity to EMI

作者：Matig a Gilbert Andrew^*; Yuce Mehmet Rasit; Redoute Jean Michel

来源：IEEE Transactions on Electromagnetic Compatibility, 2015, 57(1): 128-134.

DOI：10.1109/TEMC.2014.2359032

• Analog integrated circuits
• CMOS integrated circuits
• electromagnetic interference
• interference suppression

This paper presents an on-chip design topology that compensates the effects of electromagnetic interference (EMI) in a low-voltage differential signaling (LVDS) transmitter. The proposed structure enables the transmitter to maintain a wide differential opening by achieving a superior common-mode level independent driving current and common-mode feedback closed-loop gain. Direct power injection measurements illustrate that the proposed LVDS transmitter structure demonstrates a superior EMI immunity as it maintains an eye opening of at least 100 mVp-p in presence of a conductive EMI injection ranging from 150 to 2 GHz with an amplitude of up to 9 Vp-p. Additionally, transverse electromagnetic cell measurements validate the radiated immunity of the proposed integrated LVDS transmitter in presence of an EMI injection of 30 dBm (150 kHz-2 GHz). This EMI robust LVDS transmitter was designed using the UMC 0.18-mu m CMOS process.

• 出版日期2015-2